![The Center has successfully developed non-volatile processor chips based on resistive memory devices]( "The Center has successfully developed non-volatile processor chips based on resistive memory devices")
Recently, the Center’s research team headed by Prof. Liu Yongpan and Prof. Yang Huazhong has completed the development of a non-volatile processor chip based on resistive memory device. By introducing the vertically stacked nvSRAM architecture and automatic write termination circuit technology, it increases the running speed 6 times, and its wake-up speed reaches 20ns – the highest indicators in the world’s research reports. The result was published at the 2016 International Solid-State Circuits Conference (ISSCC). ISSCC, the world’s largest and highest-level international conference on solid-state circuit, is known as the “Integrated Circuit Olympiad”. This paper is the only one from a university in mainland China this year.